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CLEAN ROOM
1000
m2 of total surface. House in house structure. Class 100-10,000 depending
on areas. Air control (T= 21ºC±1ºC) and humidity (40%±5%).
D.I. water system (18 Mohm.cm) 28 m3/day, maximum flow: 1.6 m3/hour.
Ultrapure gas distribution. Power supply: 25 kV and 3000 kVA. Waste treatment.
Security system: gas detectors, fire and intruder protection.
Person
responsible/contact: Ferran Xinxó
(ferran.xinxo@cnm.es)
CLEAN
ROOM EQUIPMENT
1.-
Thermal processes and CVD equipment |
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- 11
tubular furnaces for oxidation, annealing and diffusion thermal processes
- 3
LPCVD furnaces for poly and nitride deposition
- 2
PECVD furnace for passivation layer deposition (oxide and nitride)
- 1
APCVD furnace for doped oxide deposition.
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2.-
Ion Implantation equipment |
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- 1
medium current implanter for
B, P, As, N and Ar
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3.-
Metallisation equipment |
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- 1
DC magnetron sputtering, manual loading, 1 cathode
- 1
DC/RF sputtering, automatic loading, 4 independent cathodes
- 1
Sputtering with 3 independent cathodes, automatic loading
- 1
Sputtering with 3 independent cathodes, manual loading
- 1
Sputtering with 1 DC cathode, manual loading
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4.-
Photolithographic equipment |
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- 1
5:1 Stepper 0.8 µm resolution
- 1
5:1 Stepper 0.5 µm resolution
- Contact/proximity
mask aligner
- Double
side contact/proximity mask aligner
- 2
automatic tracks for photoresist deposition and developing
- Mask
cleaner
- Manual
spinner for photoresist deposition
- Critical
dimension measurement system
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5.-
Dry etching equipment |
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- 1
manual RIE, one chamber
- 1
hexode RIE
- 1
automatic RIE with 4 chambers for Al, oxide, poly, nitride etching and photoresist
removal
- 2
plasma barrels
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6.-
Wet etching and cleaning equipment |
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- 10
semiautomatic wet benches
- 4
spinners for wafer rinse/drying
- 1
bench for anisotropic etching
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7.-
In-line test equipment |
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- 2
inspection microscopes
- 1
sheet resistance measurement system
- 1
profilemeter
- 1
optical interferometer for dielectric thickness measurement
- 1
Ellipsometer
- 1
FT-IR spectrometer
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