NANOFABRICATION LABORATORY

  • 25 m2 Class 100 plus SAS and air shower.
  • Temperature control of 21± 1C and humidity control
  • Total air flow of 7.000 m3/h, for a total number of 150 air renovations per hour
  • 15% of external air contribution
  • Supply of nitrogen, compressed air, vacuum and water for cooling

Person responsible/contact: Dr. Francesc Pérez-Murano

TECHNIQUES

  • Electron beam lithography (EBL)
  • AFM based nanofabrication
  • Nanoimprint lithography

  • 25 m2 Class 100 plus SAS and air shower.
  • Temperature control of 21± 1C and humidity control
  • Total air flow of 7.000 m3/h, for a total number of 150 air renovations per hour
  • 15% of external air contribution
  • Supply of nitrogen, compressed air, vacuum and water for cooling

Person responsible/contact: Dr. Francesc Pérez-Murano

TECHNIQUES

  • Electron beam lithography (EBL)
  • AFM based nanofabrication
  • Nanoimprint lithography

EQUIPMENT

AFM microscope.

  • Nanoscope IV controller and Dimension 3100 head from Veeco
  • Close-loop scanner
  • Modules for electrical characterization (TUNA and SCM) and thermal characterization (SThM)
  • Extension for nanofabrication / nanolithography (NANOMAN)
  • Sample size up to 6’’ wafer
Cuadro de texto:

Electron beam lithography system based on a SEM LEO 1530 microscope and RAITH ELPHY PLUS  controller and software

  • Beam blanker
  • Sample size up to 6’’ wafer

 

Nanoimprint lithography system (NIL) from Obducat

  • Sample size up to 6’’ wafer
  • Maximum pressure: 80 bars and temperature up to 350 ºC


PROCESSES

Nanopatterning by AFM
  • Nanopatterning by AFM local oxidation
  • Maximum size of pattern 30 µm x 30 µm
  • Minimum resolution 10 nm
  • Applicable to the following surfaces:
    - silicon,
    - aluminium and
    - other anodizable materials

EBL nanolithography

  • Lithography on PMMA
  • Resolution:50 nm
  • Maximum field dimension: 200 µm x 200 µm




Nanoimprint lithography

  • Imprinting of polymers (100 – 300 nm thickness) on different surfaces
  • Resolution from 100 nm up to 50
  • Imprinting area up to 4"
  • "In house" technology for mould fabrication and conditioning

CHARACTERIZATION

  • Topographical characterization by AFM.
    • Maximum sample size: 6 ‘’ wafer
    • Maximum range of images: 30 µm (X) x 30 µm (Y) x 4 µm (Z)
    • Lateral resolution (depending on surface features): 1 nm
    • Vertical resolution: 0.1 nm AFM


  • Local electrical characterization
    • Electrical current mapping of the surface (0.1 pA – 100 pA)
    • Lateral resolution: 10nm


  • AFM local thermal characterization.
    • Surface temperature mapping (From room temperature to 100 ºC ± 0.5 ºC)
    • Resolution: 150 nm


  • SEM characterization.
    • SEM characterisation of whole wafers up to 6’’

 
Contact: Dt@cnm.es